Parametric results for: BF536 under RF Small Signal Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

25 mA 9

9 hits Apply

Collector-Emitter Voltage-Max (1)

30 V 6

9 hits Apply

Configuration (1)

SINGLE 9

9 hits Apply

DC Current Gain-Min (hFE) (1)

25.0 5

9 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 3

9 hits Apply

R-PDSO-G3 6

9 hits Apply

e0 3

9 hits Apply

Manufacturer (5)

National Semiconductor Corporation 1 North American Philips Discrete Products Div 1 NXP Semiconductors 3 Texas Instruments 1 YAGEO Corporation 3

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (1)

3 6

9 hits Apply

140.0 °C 3

9 hits Apply

PLASTIC/EPOXY 6

9 hits Apply

RECTANGULAR 6

9 hits Apply

SMALL OUTLINE 6

9 hits Apply

Obsolete 8 Transferred 1

9 hits Apply

Polarity/Channel Type (1)

PNP 9

9 hits Apply

200 mW 3

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply

Transition Frequency-Nom (fT) (1)

350 MHz 9

9 hits Apply