Parametric results for: BF960 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 6 SINGLE WITH BUILT-IN DIODE 1

7 hits Apply

DS Breakdown Voltage-Min (1)

20 V 1

7 hits Apply

Drain Current-Max (ID) (2)

20 mA 6 30 mA 1

Min (A) - Max (A)

7 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

7 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

7 hits Apply

O-PRDB-F4 1

7 hits Apply

e0 6

7 hits Apply

Manufacturer (6)

Infineon Technologies AG 1 North American Philips Discrete Products Div 1 NXP Semiconductors 1 Philips Semiconductors 1 Siemens 2 Telefunken Microelectronics Gmbh 1

7 hits Apply

Number of Elements (1)

1 7

7 hits Apply

Number of Terminals (1)

4 1

7 hits Apply

DUAL GATE, DEPLETION MODE 1

7 hits Apply

150.0 °C 7

7 hits Apply

PLASTIC/EPOXY 1

7 hits Apply

ROUND 1

7 hits Apply

DISK BUTTON 1

7 hits Apply

Obsolete 3 Transferred 4

7 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 7

7 hits Apply

200 mW 1 225 mW 5

Min (W) - Max (W)

7 hits Apply

Surface Mount (1)

YES 7

7 hits Apply