Parametric results for: BF961 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

LOW NOISE 1

11 hits Apply

Configuration (2)

SINGLE 6 SINGLE WITH BUILT-IN DIODE 4

11 hits Apply

DS Breakdown Voltage-Min (1)

20 V 5

11 hits Apply

Drain Current-Max (ID) (2)

20 mA 3 30 mA 7

Min (A) - Max (A)

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 5

11 hits Apply

TO-50 4

11 hits Apply

O-PRDB-F4 5

11 hits Apply

e0 5 e3 1

11 hits Apply

Manufacturer (7)

Infineon Technologies AG 1 New Jersey Semiconductor Products Inc 1 Siemens 1 Telefunken Microelectronics Gmbh 3 Temic Semiconductors 3 Vishay Intertechnologies 1 Vishay Semiconductors 1

11 hits Apply

1 1

11 hits Apply

Number of Elements (1)

1 10

11 hits Apply

Number of Terminals (1)

4 5

11 hits Apply

DEPLETION MODE 1 DUAL GATE, DEPLETION MODE 7

11 hits Apply

150.0 °C 6

11 hits Apply

PLASTIC/EPOXY 5

11 hits Apply

ROUND 5

11 hits Apply

DISK BUTTON 5

11 hits Apply

Active 2 Obsolete 3 Transferred 6

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

200 mW 6

11 hits Apply

Power Gain-Min (Gp) (1)

23.0 dB 1

11 hits Apply

Surface Mount (1)

YES 8

11 hits Apply