Parametric results for: BF998E6327 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW NOISE 4

4 hits Apply

SOURCE 4

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

12 V 4

4 hits Apply

Drain Current-Max (ID) (1)

30 mA 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 4

4 hits Apply

R-PDSO-G4 4

4 hits Apply

e3 3

4 hits Apply

Manufacturer (3)

Infineon Technologies AG 2 Rochester Electronics LLC 1 Siemens 1

4 hits Apply

1 2 NOT SPECIFIED 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

4 4

4 hits Apply

DUAL GATE, DEPLETION MODE 4

4 hits Apply

150.0 °C 1

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 1 Obsolete 2 Transferred 1

4 hits Apply

Yes 3

4 hits Apply

260 2 NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

200 mW 1

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply