Parametric results for: BFG741 under RF Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTOR 1

5 hits Apply

COLLECTOR 1

5 hits Apply

Collector Current-Max (IC) (1)

300 mA 5

5 hits Apply

Collector-Emitter Voltage-Max (1)

15 V 3

5 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN RESISTOR 1

5 hits Apply

DC Current Gain-Min (hFE) (1)

60.0 3

5 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

5 hits Apply

R-PDSO-G4 3

5 hits Apply

e0 2

5 hits Apply

Manufacturer (3)

North American Philips Discrete Products Div 1 NXP Semiconductors 3 Philips Semiconductors 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

4 3

5 hits Apply

175.0 °C 3

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

SMALL OUTLINE 3

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

Polarity/Channel Type (1)

NPN 5

5 hits Apply

2 W 3

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply

Transition Frequency-Nom (fT) (1)

7 GHz 3

5 hits Apply