Parametric results for: BLD6G22L under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 2

4 hits Apply

Configuration (2)

COMPLEX 2 SINGLE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

65 V 2

4 hits Apply

Drain Current-Max (ID) (1)

10.2 A 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

Highest Frequency Band (1)

S BAND 2

4 hits Apply

R-CDFM-F4 1 R-CDFP-F4 1

4 hits Apply

Manufacturer (1)

NXP Semiconductors 4

4 hits Apply

Number of Elements (2)

1 2 2 2

Min - Max

4 hits Apply

Number of Terminals (1)

4 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

200.0 °C 4

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

FLANGE MOUNT 1 FLATPACK 1

4 hits Apply

Obsolete 4

4 hits Apply

260 2 NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply