Parametric results for: BLF177 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

ISOLATED 3

9 hits Apply

Configuration (1)

SINGLE 7

9 hits Apply

DS Breakdown Voltage-Min (1)

125 V 4

9 hits Apply

Drain Current-Max (ID) (1)

16 A 7

9 hits Apply

Drain-source On Resistance-Max (1)

300 mΩ 2

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

9 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 4

9 hits Apply

O-CRFM-F4 3

9 hits Apply

Manufacturer (6)

Advanced Semiconductor Inc 1 Ampleon 2 New Jersey Semiconductor Products Inc 1 North American Philips Discrete Products Div 1 NXP Semiconductors 3 Philips Semiconductors 1

9 hits Apply

Number of Elements (1)

1 7

9 hits Apply

Number of Terminals (1)

4 3

9 hits Apply

ENHANCEMENT MODE 6

9 hits Apply

200.0 °C 6

9 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

9 hits Apply

ROUND 3

9 hits Apply

FLANGE MOUNT 3

9 hits Apply

Active 2 Obsolete 5 Transferred 2

9 hits Apply

Yes 2

9 hits Apply

NOT SPECIFIED 1

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 7

9 hits Apply

220 W 2

9 hits Apply

220 W 5

9 hits Apply

Surface Mount (2)

NO 3 YES 3

9 hits Apply