Parametric results for: BLF3G21-30 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 4

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

65 V 4

4 hits Apply

Drain Current-Max (ID) (1)

4.5 A 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 4

4 hits Apply

R-CDFM-F2 4

4 hits Apply

e3 1

4 hits Apply

Manufacturer (2)

Ampleon 2 NXP Semiconductors 2

4 hits Apply

1 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 1 200.0 °C 1

Min (°C) - Max (°C)

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Contact Manufacturer 2 Obsolete 2

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply