Parametric results for: BLF4G10-120 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

SOURCE 1

1 hit Apply

Configuration (1)

SINGLE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

65 V 1

1 hit Apply

Drain Current-Max (ID) (1)

12 A 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

1 hit Apply

R-CDFM-F2 1

1 hit Apply

Manufacturer (1)

NXP Semiconductors 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

2 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

CERAMIC, METAL-SEALED COFIRED 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Obsolete 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply