Parametric results for: BLF546-2015 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

HIGH RELIABILITY 3

5 hits Apply

SOURCE 3

5 hits Apply

Configuration (2)

COMMON SOURCE, 2 ELEMENTS 3 SINGLE 2

5 hits Apply

DS Breakdown Voltage-Min (1)

65 V 3

5 hits Apply

Drain Current-Max (ID) (1)

9 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

600 mΩ 2

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 3

5 hits Apply

R-CDFM-F4 3

5 hits Apply

Manufacturer (3)

North American Philips Discrete Products Div 1 NXP Semiconductors 3 Philips Semiconductors 1

5 hits Apply

Number of Elements (2)

1 2 2 3

Min - Max

5 hits Apply

Number of Terminals (1)

4 3

5 hits Apply

ENHANCEMENT MODE 3

5 hits Apply

200.0 °C 5

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

FLANGE MOUNT 3

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

Yes 2

5 hits Apply

NOT SPECIFIED 3

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

145 W 2

5 hits Apply

Power Gain-Min (Gp) (1)

11.0 dB 2

5 hits Apply

Surface Mount (1)

YES 3

5 hits Apply