Parametric results for: BLF578XR112 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 1

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Configuration (1)

COMMON SOURCE, 2 ELEMENTS 1

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DS Breakdown Voltage-Min (1)

110 V 1

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METAL-OXIDE SEMICONDUCTOR 1

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Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

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R-CDFM-F4 1

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Manufacturer (1)

Ampleon 1

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1 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

4 1

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ENHANCEMENT MODE 1

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CERAMIC, METAL-SEALED COFIRED 1

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RECTANGULAR 1

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FLANGE MOUNT 1

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Contact Manufacturer 1

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245 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Surface Mount (1)

YES 1

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