Parametric results for: BLF6G20- under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

HIGH EFFICIENCY 1

41 hits Apply

SOURCE 29

41 hits Apply

Configuration (2)

COMMON SOURCE, 2 ELEMENTS 3 SINGLE 33

41 hits Apply

DS Breakdown Voltage-Min (1)

65 V 29

41 hits Apply

Drain Current-Max (ID) (5)

13 A 8 18 A 6 29 A 9 39 A 6 49 A 3

Min (A) - Max (A)

41 hits Apply

METAL-OXIDE SEMICONDUCTOR 40

41 hits Apply

Highest Frequency Band (2)

L BAND 27 S BAND 2

41 hits Apply

R-CDFM-F2 8 R-CDFM-F4 3 R-CDFP-F2 17 R-CDFP-F4 1

41 hits Apply

Manufacturer (3)

Ampleon 6 NXP Semiconductors 34 Philips Semiconductors 1

41 hits Apply

Number of Elements (2)

1 33 2 3

Min - Max

41 hits Apply

Number of Terminals (2)

2 25 4 4

41 hits Apply

ENHANCEMENT MODE 40

41 hits Apply

150.0 °C 5 225.0 °C 28

Min (°C) - Max (°C)

41 hits Apply

CERAMIC, METAL-SEALED COFIRED 29

41 hits Apply

RECTANGULAR 29

41 hits Apply

FLANGE MOUNT 11 FLATPACK 18

41 hits Apply

Active 1 Obsolete 33 Transferred 7

41 hits Apply

Yes 10

41 hits Apply

245 1 NOT SPECIFIED 26

41 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 40

41 hits Apply

Surface Mount (2)

NO 2 YES 33

41 hits Apply