Parametric results for: BLF8G10LS under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 14

32 hits Apply

Configuration (2)

COMMON SOURCE, 2 ELEMENTS 2 SINGLE 22

32 hits Apply

DS Breakdown Voltage-Min (1)

65 V 14

32 hits Apply

Drain Current-Max (ID) (1)

56 A 2

32 hits Apply

METAL-OXIDE SEMICONDUCTOR 24

32 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 14

32 hits Apply

R-CDFP-F2 6 R-CDFP-F4 2 R-CDFP-F6 4 R-CDSO-G6 2

32 hits Apply

Manufacturer (2)

Ampleon 16 NXP Semiconductors 16

32 hits Apply

1 6 NOT APPLICABLE 2

32 hits Apply

Number of Elements (2)

1 22 2 2

Min - Max

32 hits Apply

Number of Terminals (3)

2 6 4 2 6 6

32 hits Apply

ENHANCEMENT MODE 24

32 hits Apply

200.0 °C 4 225.0 °C 6

Min (°C) - Max (°C)

32 hits Apply

CERAMIC, METAL-SEALED COFIRED 14

32 hits Apply

RECTANGULAR 14

32 hits Apply

FLATPACK 12 SMALL OUTLINE 2

32 hits Apply

Obsolete 16 Transferred 16

32 hits Apply

260 5 NOT SPECIFIED 18

32 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 24

32 hits Apply

Surface Mount (1)

YES 14

32 hits Apply