Parametric results for: BLV103 under RF Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS 1

3 hits Apply

ISOLATED 1

3 hits Apply

Collector Current-Max (IC) (2)

1.2 A 2 1.25 A 1

Min (A) - Max (A)

3 hits Apply

8 pF 1

3 hits Apply

Collector-Emitter Voltage-Max (1)

30 V 1

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DC Current Gain-Min (hFE) (1)

20.0 3

3 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

3 hits Apply

R-CDFM-F6 1

3 hits Apply

Manufacturer (3)

North American Philips Discrete Products Div 1 NXP Semiconductors 1 Philips Semiconductors 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

6 1

3 hits Apply

200.0 °C 3

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

FLANGE MOUNT 1

3 hits Apply

Obsolete 1 Transferred 2

3 hits Apply

Polarity/Channel Type (1)

NPN 3

3 hits Apply

17 W 1

3 hits Apply

17 W 3

3 hits Apply

Power Gain-Min (Gp) (1)

11.5 dB 1

3 hits Apply

Surface Mount (2)

NO 2 YES 1

3 hits Apply