Parametric results for: BLV57 under RF Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT)

HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS 2

8 hits Apply

ISOLATED 2

8 hits Apply

Collector Current-Max (IC) (1)

2 A 8

8 hits Apply

30 pF 2

8 hits Apply

Collector-Emitter Voltage-Max (1)

27 V 4

8 hits Apply

Configuration (2)

COMMON EMITTER, 2 ELEMENTS 2 SINGLE 6

8 hits Apply

DC Current Gain-Min (hFE) (1)

15.0 7

8 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 4

8 hits Apply

R-CDFM-F8 3

8 hits Apply

Manufacturer (7)

Advanced Semiconductor Inc 1 New Jersey Semiconductor Products Inc 1 North American Philips Discrete Products Div 1 NXP Semiconductors 2 Pacific Monolithics 1 Philips Semiconductors 1 Richardson Electronics Ltd 1

8 hits Apply

Number of Elements (2)

1 6 2 2

Min - Max

8 hits Apply

Number of Terminals (1)

8 3

8 hits Apply

200.0 °C 6

8 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

8 hits Apply

RECTANGULAR 3

8 hits Apply

FLANGE MOUNT 3

8 hits Apply

Active 2 Contact Manufacturer 2 Obsolete 2 Transferred 2

8 hits Apply

NOT SPECIFIED 1

8 hits Apply

Polarity/Channel Type (1)

NPN 8

8 hits Apply

77 W 1

8 hits Apply

77 W 6

8 hits Apply

Power Gain-Min (Gp) (1)

8.0 dB 1

8 hits Apply

Surface Mount (2)

NO 4 YES 3

8 hits Apply

Transition Frequency-Nom (fT) (1)

2.5 GHz 4

8 hits Apply