Parametric results for: BLV58 under RF Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS 1

4 hits Apply

EMITTER 2

4 hits Apply

Collector Current-Max (IC) (1)

4 A 4

4 hits Apply

45 pF 1

4 hits Apply

Collector-Emitter Voltage-Max (1)

27 V 2

4 hits Apply

Configuration (2)

COMMON EMITTER, 2 ELEMENTS 2 SINGLE 2

4 hits Apply

DC Current Gain-Min (hFE) (1)

30.0 4

4 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 2

4 hits Apply

R-CDFM-F4 1

4 hits Apply

Manufacturer (4)

New Jersey Semiconductor Products Inc 1 North American Philips Discrete Products Div 1 NXP Semiconductors 1 Philips Semiconductors 1

4 hits Apply

Number of Elements (2)

1 2 2 2

Min - Max

4 hits Apply

Number of Terminals (1)

4 1

4 hits Apply

200.0 °C 3

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 1

4 hits Apply

RECTANGULAR 1

4 hits Apply

FLANGE MOUNT 1

4 hits Apply

Active 1 Obsolete 1 Transferred 2

4 hits Apply

Polarity/Channel Type (1)

NPN 4

4 hits Apply

87 W 1

4 hits Apply

87 W 3

4 hits Apply

Power Gain-Min (Gp) (1)

10.0 dB 1

4 hits Apply

Surface Mount (2)

NO 2 YES 1

4 hits Apply