Parametric results for: BLV859 under RF Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY, WITH POLYSILICON EMITTER BALLASTING RESISTORS 1

4 hits Apply

EMITTER 2

4 hits Apply

Collector Current-Max (IC) (1)

15 A 4

4 hits Apply

Collector-Emitter Voltage-Max (1)

28 V 3

4 hits Apply

Configuration (2)

COMMON EMITTER, 2 ELEMENTS 2 SINGLE 1

4 hits Apply

DC Current Gain-Min (hFE) (1)

30.0 4

4 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 3

4 hits Apply

R-CDFM-F4 2

4 hits Apply

Manufacturer (4)

Advanced Semiconductor Inc 1 New Jersey Semiconductor Products Inc 1 NXP Semiconductors 1 Philips Semiconductors 1

4 hits Apply

Number of Elements (2)

1 2 2 1

Min - Max

4 hits Apply

Number of Terminals (1)

4 2

4 hits Apply

200.0 °C 3

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

FLANGE MOUNT 2

4 hits Apply

Active 2 Obsolete 1 Transferred 1

4 hits Apply

Polarity/Channel Type (1)

NPN 4

4 hits Apply

130 W 1 145 W 2

Min (W) - Max (W)

4 hits Apply

Surface Mount (2)

NO 1 YES 2

4 hits Apply