Parametric results for: BLW84 under RF Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT)

ISOLATED 1

4 hits Apply

Collector Current-Max (IC) (1)

3 A 4

4 hits Apply

Collector-Emitter Voltage-Max (1)

36 V 1

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DC Current Gain-Min (hFE) (1)

10.0 4

4 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 1

4 hits Apply

O-CRFM-F4 1

4 hits Apply

e0 2

4 hits Apply

Manufacturer (4)

Advanced Semiconductor Inc 1 North American Philips Discrete Products Div 1 NXP Semiconductors 1 Philips Semiconductors 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

4 1

4 hits Apply

200.0 °C 4

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 1

4 hits Apply

ROUND 1

4 hits Apply

FLANGE MOUNT 1

4 hits Apply

Active 1 Obsolete 1 Transferred 2

4 hits Apply

Polarity/Channel Type (1)

NPN 4

4 hits Apply

76 W 3

4 hits Apply

Power Gain-Min (Gp) (1)

9.0 dB 1

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply

Transition Frequency-Nom (fT) (1)

650 MHz 1

4 hits Apply