Parametric results for: BSC014N04LSATMA1 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE 1

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170.0 mJ 1

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DRAIN 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

40 V 1

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Drain Current-Max (ID) (1)

32 A 1

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Drain-source On Resistance-Max (1)

1.9 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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R-PDSO-F8 1

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e3 1

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Manufacturer (1)

Infineon Technologies AG 1

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1 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

8 1

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ENHANCEMENT MODE 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Active 1

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No 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Surface Mount (1)

YES 1

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