Parametric results for: BSD840N under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 3

4 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

20 V 4

4 hits Apply

Drain Current-Max (ID) (2)

880 mA 2 3.5 A 2

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (1)

400 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PDSO-G6 4

4 hits Apply

e3 4

4 hits Apply

Manufacturer (1)

Infineon Technologies AG 4

4 hits Apply

1 3

4 hits Apply

Number of Elements (1)

2 4

4 hits Apply

Number of Terminals (1)

6 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 1 175.0 °C 1

Min (°C) - Max (°C)

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 3 Obsolete 1

4 hits Apply

Yes 1

4 hits Apply

260 1 NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

500 mW 2

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply