Parametric results for: BSN10A under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 5

9 hits Apply

DS Breakdown Voltage-Min (1)

50 V 5

9 hits Apply

Drain Current-Max (ID) (1)

175 mA 9

9 hits Apply

Drain-source On Resistance-Max (1)

20 Ω 5

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

5 pF 5

9 hits Apply

TO-92 5

9 hits Apply

O-PBCY-T3 5

9 hits Apply

e0 4

9 hits Apply

Manufacturer (3)

North American Philips Discrete Products Div 1 NXP Semiconductors 5 Philips Semiconductors 3

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (1)

3 5

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

150.0 °C 9

9 hits Apply

PLASTIC/EPOXY 5

9 hits Apply

ROUND 5

9 hits Apply

CYLINDRICAL 5

9 hits Apply

Obsolete 6 Transferred 3

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

830 mW 7

9 hits Apply

Surface Mount (1)

NO 9

9 hits Apply