Parametric results for: BSN12 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 2

6 hits Apply

DS Breakdown Voltage-Min (1)

50 V 2

6 hits Apply

Drain Current-Max (ID) (1)

150 mA 6

6 hits Apply

Drain-source On Resistance-Max (1)

30 Ω 2

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

3 pF 2

6 hits Apply

TO-92 2

6 hits Apply

O-PBCY-T3 2

6 hits Apply

e0 4

6 hits Apply

Manufacturer (3)

North American Philips Discrete Products Div 2 NXP Semiconductors 2 Philips Semiconductors 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 2

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 6

6 hits Apply

PLASTIC/EPOXY 2

6 hits Apply

ROUND 2

6 hits Apply

CYLINDRICAL 2

6 hits Apply

Obsolete 2 Transferred 4

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

830 mW 4

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply