Parametric results for: BSO615NG under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 4

5 hits Apply

60.0 mJ 4

5 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

5 hits Apply

Drain Current-Max (ID) (1)

2.6 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

150 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

R-PDSO-G8 4

5 hits Apply

e3 4

5 hits Apply

Manufacturer (2)

Infineon Technologies AG 4 Rochester Electronics LLC 1

5 hits Apply

3 3 NOT SPECIFIED 1

5 hits Apply

Number of Elements (1)

2 4

5 hits Apply

Number of Terminals (1)

8 4

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 3

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Active 1 Obsolete 4

5 hits Apply

Yes 4

5 hits Apply

260 2 NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

2 W 1

5 hits Apply

Surface Mount (1)

YES 4

5 hits Apply