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BSP171PE6327
Infineon Technologies AG
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Check for Price | Yes | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 1.9 A | 300 mΩ | AVALANCHE RATED | 55 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PDSO-G4 | e3 | AEC-Q101 | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-G4 | compliant | EAR99 | Infineon | |||||||||||||
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BSP171P
Siemens
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Check for Price | Transferred | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 1.8 A | 300 mΩ | LOGIC LEVEL COMPATIBLE | 70 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 7.2 A | SWITCHING | SILICON | R-PDSO-G4 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | SIEMENS A G | unknown | EAR99 | ||||||||||||||||||
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BSP171PL6327XT
Infineon Technologies AG
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Check for Price | Yes | Yes | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 1.9 A | 300 mΩ | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 70 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 7.6 A | SILICON | R-PDSO-G4 | e3 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-G4 | unknown | EAR99 | 4 | |||||||||||||
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BSP171P
Infineon Technologies AG
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Check for Price | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 1.9 A | 300 mΩ | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 70 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.8 W | 7.6 A | SWITCHING | SILICON | R-PDSO-G4 | e3 | Not Qualified | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SOT-223, 4 PIN | compliant | EAR99 | Infineon | 4 | SOT-223 | ||||
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BSP171PL6327
Infineon Technologies AG
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Check for Price | Yes | Yes | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 1.9 A | 300 mΩ | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 70 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1.8 W | 7.6 A | SILICON | R-PDSO-G4 | e3 | Not Qualified | 1 | 150 °C | 260 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-G4 | compliant | EAR99 | 4 |