Parametric results for: BSS215P under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 2

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

20 V 5

5 hits Apply

Drain Current-Max (ID) (1)

1.5 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

150 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

128 pF 5

5 hits Apply

R-PDSO-G3 5

5 hits Apply

e3 2

5 hits Apply

Manufacturer (1)

Infineon Technologies AG 5

5 hits Apply

1 2

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 3

5 hits Apply

PLASTIC/EPOXY 5

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RECTANGULAR 5

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SMALL OUTLINE 5

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Active 3 Obsolete 2

5 hits Apply

Yes 1

5 hits Apply

260 1 NOT SPECIFIED 2

5 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 5

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500 mW 2

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply