Parametric results for: BSS225 under Small Signal Field-Effect Transistors
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BSS225H6327FTSA1
Infineon Technologies AG
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$0.3693 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 90 mA | 45 Ω | LOGIC LEVEL COMPATIBLE | 4.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PSSO-F3 | e3 | AEC-Q101 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-F3 | 3 | compliant | EAR99 | Infineon | |||||||
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BSS225H6327
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 90 mA | 45 Ω | LOGIC LEVEL COMPATIBLE | 4.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PSSO-F3 | e3 | AEC-Q101 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | FLAT | SINGLE | INFINEON TECHNOLOGIES AG | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | 3 | compliant | EAR99 | ||||||||||||
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BSS225L6327HTSA1
Infineon Technologies AG
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 90 mA | 45 Ω | LOGIC LEVEL COMPATIBLE | 4.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PSSO-F3 | AEC-Q101 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | SINGLE | INFINEON TECHNOLOGIES AG | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | unknown | EAR99 | ||||||||||||||||
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BSS225
Infineon Technologies AG
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 90 mA | 45 Ω | LOGIC LEVEL COMPATIBLE | 4.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PSSO-F3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | SINGLE | INFINEON TECHNOLOGIES AG | SOT-89, 3 PIN | 3 | compliant | EAR99 | Infineon | SOT-89 | ||||
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BSS225E6327
Infineon Technologies AG
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 90 mA | 45 Ω | LOGIC LEVEL COMPATIBLE | 4.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PSSO-F3 | e3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | FLAT | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-F3 | 3 | compliant | EAR99 | |||||||||||
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BSS225H6327XTSA1
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 90 mA | 45 Ω | LOGIC LEVEL COMPATIBLE | 4.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PSSO-F3 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-F3 | compliant | EAR99 | Infineon | ||||||||||||
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BSS225L6327
Infineon Technologies AG
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 90 mA | 45 Ω | LOGIC LEVEL COMPATIBLE | 4.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SILICON | R-PSSO-F3 | e3 | Not Qualified | 1 | 150 °C | 260 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | FLAT | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-F3 | 3 | compliant | EAR99 |