Parametric results for: BSS84-H under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (2)

50 V 1 60 V 1

Min (V) - Max (V)

3 hits Apply

Drain Current-Max (ID) (2)

130 mA 1 230 mA 1

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (2)

6.4 Ω 1 10 Ω 1

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

5 pF 1

3 hits Apply

R-PDSO-G3 2

3 hits Apply

Manufacturer (3)

Comchip Technology Corporation Ltd 1 Formosa Microsemi Co Ltd 1 ROHM Semiconductor 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

SMALL OUTLINE 2

3 hits Apply

Active 2 Obsolete 1

3 hits Apply

NOT SPECIFIED 2

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 2

3 hits Apply

225 mW 1

3 hits Apply

225 mW 1

3 hits Apply

Surface Mount (1)

YES 2

3 hits Apply