Parametric results for: BSS84AKW%2C115 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 4

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

50 V 4

5 hits Apply

Drain Current-Max (ID) (1)

150 mA 4

5 hits Apply

Drain-source On Resistance-Max (1)

8.5 Ω 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

R-PDSO-G3 4

5 hits Apply

e3 4

5 hits Apply

Manufacturer (3)

Nexperia 2 NXP Semiconductors 2 Suzhou Good-Ark Electronics Co Ltd 1

5 hits Apply

1 4

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

3 4

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 3

5 hits Apply

-55.0 °C 2

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Active 3 Transferred 2

5 hits Apply

260 4 NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

5 hits Apply

310 mW 1

5 hits Apply

Surface Mount (1)

YES 4

5 hits Apply