Parametric results for: BSZ0901NS under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

80.0 mJ 2 150.0 mJ 3

Min (mJ) - Max (mJ)

5 hits Apply

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

30 V 5

5 hits Apply

Drain Current-Max (ID) (2)

22 A 3 25 A 2

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (2)

2.6 mΩ 3 2.8 mΩ 2

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-N3 2 R-PDSO-N8 3

5 hits Apply

e3 4

5 hits Apply

Manufacturer (1)

Infineon Technologies AG 5

5 hits Apply

1 4

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (2)

3 2 8 3

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 2

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Active 1 Not Recommended 4

5 hits Apply

No 4

5 hits Apply

NOT SPECIFIED 5

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

50 W 1 69 W 1

Min (W) - Max (W)

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply