Parametric results for: BUJ100,412 under Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Collector Current-Max (IC) (1)

1 A 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

400 V 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DC Current Gain-Min (hFE) (1)

9.0 2

2 hits Apply

TO-92 2

2 hits Apply

O-PBCY-T3 2

2 hits Apply

e3 1

2 hits Apply

Manufacturer (2)

NXP Semiconductors 1 WeEn Semiconductor Co Ltd 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

ROUND 2

2 hits Apply

CYLINDRICAL 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

260 1 NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

NPN 2

2 hits Apply

2 W 1

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply