Parametric results for: BUJ100B,116 under Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount Collector Current-Max (IC) (1)

1 A 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

350 V 1

1 hit Apply

Configuration (1)

SINGLE 1

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DC Current Gain-Min (hFE) (1)

9.0 1

1 hit Apply

TO-92 1

1 hit Apply

O-PBCY-T3 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

NXP Semiconductors 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

3 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

ROUND 1

1 hit Apply

CYLINDRICAL 1

1 hit Apply

Obsolete 1

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NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

NPN 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply