Parametric results for: BUK100-50GL under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

6 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 2

6 hits Apply

DS Breakdown Voltage-Min (1)

50 V 2

6 hits Apply

Drain Current-Max (ID) (1)

13.5 A 4

6 hits Apply

Drain-source On Resistance-Max (1)

125 mΩ 2

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

6 hits Apply

TO-220AB 2

6 hits Apply

R-PSFM-T3 2

6 hits Apply

e0 1 e3 3

6 hits Apply

Manufacturer (4)

Nexperia 2 North American Philips Discrete Products Div 1 NXP Semiconductors 2 Philips Semiconductors 1

6 hits Apply

Number of Elements (1)

1 4

6 hits Apply

Number of Terminals (1)

3 2

6 hits Apply

ENHANCEMENT MODE 4

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 2

6 hits Apply

RECTANGULAR 2

6 hits Apply

FLANGE MOUNT 2

6 hits Apply

Obsolete 2 Transferred 4

6 hits Apply

NOT SPECIFIED 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

6 hits Apply

40 W 4

6 hits Apply

Surface Mount (1)

NO 4

6 hits Apply