Parametric results for: BUK102-50DL under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE, ESD PROTECTED 1 LOGIC LEVEL COMPATIBLE, ESD PROTECTION 2

5 hits Apply

DRAIN 3

5 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 3

5 hits Apply

DS Breakdown Voltage-Min (1)

50 V 3

5 hits Apply

Drain Current-Max (ID) (1)

45 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

35 mΩ 3

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-220AB 3

5 hits Apply

R-PSFM-T3 2 S-PSFM-T3 1

5 hits Apply

e0 2

5 hits Apply

Manufacturer (3)

North American Philips Discrete Products Div 1 NXP Semiconductors 3 Philips Semiconductors 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 3

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 4

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 2 SQUARE 1

5 hits Apply

FLANGE MOUNT 3

5 hits Apply

Obsolete 3 Transferred 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

125 W 2

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply