Parametric results for: BUK48160A under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

6 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 3

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 3

6 hits Apply

Drain Current-Max (ID) (1)

1.6 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

350 mΩ 3

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

50 pF 3

6 hits Apply

R-PDSO-G4 3

6 hits Apply

e0 3

6 hits Apply

Manufacturer (3)

North American Philips Discrete Products Div 1 NXP Semiconductors 3 Philips Semiconductors 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

4 3

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 6

6 hits Apply

PLASTIC/EPOXY 3

6 hits Apply

RECTANGULAR 3

6 hits Apply

SMALL OUTLINE 3

6 hits Apply

Obsolete 3 Transferred 3

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

1.5 W 5

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply