Parametric results for: BUK78150-55A under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

25.0 mJ 14

15 hits Apply

DRAIN 14

15 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 14

15 hits Apply

DS Breakdown Voltage-Min (1)

55 V 14

15 hits Apply

Drain Current-Max (ID) (1)

5.5 A 15

15 hits Apply

Drain-source On Resistance-Max (1)

150 mΩ 14

15 hits Apply

METAL-OXIDE SEMICONDUCTOR 15

15 hits Apply

R-PDSO-G4 14

15 hits Apply

e3 13

15 hits Apply

Manufacturer (3)

Nexperia 7 NXP Semiconductors 7 Philips Semiconductors 1

15 hits Apply

1 12

15 hits Apply

Number of Elements (1)

1 15

15 hits Apply

Number of Terminals (1)

4 14

15 hits Apply

ENHANCEMENT MODE 15

15 hits Apply

150.0 °C 8

15 hits Apply

PLASTIC/EPOXY 14

15 hits Apply

RECTANGULAR 14

15 hits Apply

SMALL OUTLINE 14

15 hits Apply

Active 5 Obsolete 8 Transferred 2

15 hits Apply

Yes 1

15 hits Apply

260 10

15 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 15

15 hits Apply

8 W 6

15 hits Apply

Surface Mount (1)

YES 15

15 hits Apply