Findchips: Parametric Search Results for BUK7E2R7-30B


Select Parts		Part Number

		BUK7E2R7-30B NXP Semiconductors
		BUK7E2R7-30B,127 Nexperia
		BUK7E2R7-30B,127 NXP Semiconductors
		BUK7E2R7-30B Nexperia

				Most Relevant								Technical								Compliance				Operating Conditions	Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Additional Feature	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Operating Temperature-Max	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	Manufacturer Package Code	HTS Code	Date Of Intro	Samacsys Manufacturer

Check for Price

Yes

Transferred

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

30 V

75 A

2.7 mΩ

LOGIC LEVEL COMPATIBLE

2300 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

300 W

967 A

SWITCHING

SILICON

TO-262AA

R-PSIP-T3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN

THROUGH-HOLE

SINGLE

NXP SEMICONDUCTORS

TO-262AA

PLASTIC, I2PAK-3

not_compliant

EAR99

Check for Price

Yes

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

30 V

75 A

2.7 mΩ

LOGIC LEVEL COMPATIBLE

2300 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

300 W

967 A

SWITCHING

SILICON

TO-262AA

R-PSIP-T3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN

THROUGH-HOLE

SINGLE

NEXPERIA

TO-262

PLASTIC, I2PAK-3

not_compliant

EAR99

SOT226

8541.29.00.75

2017-02-01

Nexperia

Check for Price

Yes

Transferred

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

30 V

75 A

2.7 mΩ

LOGIC LEVEL COMPATIBLE

2300 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

300 W

967 A

SWITCHING

SILICON

TO-262AA

R-PSIP-T3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN

THROUGH-HOLE

SINGLE

NXP SEMICONDUCTORS

TO-262

PLASTIC, I2PAK-3

not_compliant

EAR99

SOT226

8541.29.00.75

Check for Price

Yes

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

30 V

75 A

2.7 mΩ

LOGIC LEVEL COMPATIBLE

2300 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

967 A

SWITCHING

SILICON

TO-262AA

R-PSIP-T3

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN

THROUGH-HOLE

SINGLE

NEXPERIA

I2PAK-3

not_compliant

EAR99

2017-02-01

Compare

BUK7E2R7-30B

NXP Semiconductors

Check for Price

Yes

Transferred

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

30 V

75 A

2.7 mΩ

LOGIC LEVEL COMPATIBLE

2300 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

300 W

967 A

SWITCHING

SILICON

TO-262AA

R-PSIP-T3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN

THROUGH-HOLE

SINGLE

NXP SEMICONDUCTORS

TO-262AA

PLASTIC, I2PAK-3

not_compliant

EAR99

BUK7E2R7-30B,127

Nexperia

Check for Price

Yes

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

30 V

75 A

2.7 mΩ

LOGIC LEVEL COMPATIBLE

2300 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

300 W

967 A

SWITCHING

SILICON

TO-262AA

R-PSIP-T3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN

THROUGH-HOLE

SINGLE

NEXPERIA

TO-262

PLASTIC, I2PAK-3

not_compliant

EAR99

SOT226

8541.29.00.75

2017-02-01

Nexperia

BUK7E2R7-30B,127

NXP Semiconductors

Check for Price

Yes

Transferred

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

30 V

75 A

2.7 mΩ

LOGIC LEVEL COMPATIBLE

2300 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

300 W

967 A

SWITCHING

SILICON

TO-262AA

R-PSIP-T3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN

THROUGH-HOLE

SINGLE

NXP SEMICONDUCTORS

TO-262

PLASTIC, I2PAK-3

not_compliant

EAR99

SOT226

8541.29.00.75

BUK7E2R7-30B

Nexperia

Check for Price

Yes

Obsolete

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

30 V

75 A

2.7 mΩ

LOGIC LEVEL COMPATIBLE

2300 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

967 A

SWITCHING

SILICON

TO-262AA

R-PSIP-T3

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN

THROUGH-HOLE

SINGLE

NEXPERIA

I2PAK-3

not_compliant

EAR99

2017-02-01

Parametric results for: BUK7E2R7-30B under Power Field-Effect Transistors