Parametric results for: BUK9640 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

182.0 mJ 5

6 hits Apply

DRAIN 5

6 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

100 V 5

6 hits Apply

Drain Current-Max (ID) (2)

37 A 1 39 A 5

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (1)

43 mΩ 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PSSO-G2 5

6 hits Apply

e3 6

6 hits Apply

Manufacturer (3)

Nexperia 2 NXP Semiconductors 3 Philips Semiconductors 1

6 hits Apply

1 6

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 5

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 5

6 hits Apply

PLASTIC/EPOXY 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

SMALL OUTLINE 5

6 hits Apply

Active 2 Transferred 4

6 hits Apply

Yes 2

6 hits Apply

245 5

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

138 W 2 158 W 1

Min (W) - Max (W)

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply