Parametric results for: BUK98150-55A under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

6.4 mJ 2 22.0 mJ 9

Min (mJ) - Max (mJ)

13 hits Apply

DRAIN 11

13 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 11

13 hits Apply

DS Breakdown Voltage-Min (1)

55 V 11

13 hits Apply

Drain Current-Max (ID) (2)

5 A 4 5.5 A 9

Min (A) - Max (A)

13 hits Apply

Drain-source On Resistance-Max (1)

161 mΩ 11

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

13 hits Apply

R-PDSO-G4 11

13 hits Apply

e3 11

13 hits Apply

Manufacturer (3)

Nexperia 5 NXP Semiconductors 7 Philips Semiconductors 1

13 hits Apply

1 12

13 hits Apply

Number of Elements (1)

1 13

13 hits Apply

Number of Terminals (1)

4 11

13 hits Apply

ENHANCEMENT MODE 13

13 hits Apply

150.0 °C 7

13 hits Apply

PLASTIC/EPOXY 11

13 hits Apply

RECTANGULAR 11

13 hits Apply

SMALL OUTLINE 11

13 hits Apply

Active 4 Obsolete 5 Transferred 4

13 hits Apply

Yes 1

13 hits Apply

260 8

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 13

13 hits Apply

6 W 5

13 hits Apply

Surface Mount (1)

YES 13

13 hits Apply