Parametric results for: BUK98150-55A/CU under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

22.0 mJ 5

5 hits Apply

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

55 V 5

5 hits Apply

Drain Current-Max (ID) (1)

5.5 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

161 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-G4 5

5 hits Apply

e3 5

5 hits Apply

Manufacturer (2)

Nexperia 3 NXP Semiconductors 2

5 hits Apply

1 5

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

4 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Active 3 Transferred 2

5 hits Apply

260 4

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply