Parametric results for: BUZ101LE3045A under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 1 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 2

3 hits Apply

70.0 mJ 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

50 V 3

3 hits Apply

Drain Current-Max (ID) (1)

29 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

60 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

150 pF 1

3 hits Apply

TO-220AB 3

3 hits Apply

R-PSFM-T3 3

3 hits Apply

e0 1

3 hits Apply

Manufacturer (3)

Infineon Technologies AG 1 Rochester Electronics LLC 1 Siemens 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Active 1 Obsolete 1 Transferred 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

100 W 1

3 hits Apply

100 W 1

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply