Parametric results for: BUZ104SL under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 1 LOGIC LEVEL COMPATIBLE 2 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 3

6 hits Apply

52.0 mJ 5

6 hits Apply

Configuration (3)

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE 2 SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

6 hits Apply

DS Breakdown Voltage-Min (1)

55 V 6

6 hits Apply

Drain Current-Max (ID) (3)

3.2 A 2 12.5 A 3 12.8 A 1

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (3)

110 mΩ 3 120 mΩ 1 125 mΩ 2

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-220AB 2 TO-263AB 2

6 hits Apply

R-PDSO-G28 2 R-PSFM-T3 2 R-PSSO-G2 2

6 hits Apply

e0 2

6 hits Apply

Manufacturer (2)

Infineon Technologies AG 4 Siemens 2

6 hits Apply

Number of Elements (2)

1 4 4 2

Min - Max

6 hits Apply

Number of Terminals (3)

2 2 28 2 3 2

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 4

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

FLANGE MOUNT 2 SMALL OUTLINE 4

6 hits Apply

Obsolete 4 Transferred 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

9.6 W 1 35 W 3

Min (W) - Max (W)

6 hits Apply

Surface Mount (2)

NO 2 YES 4

6 hits Apply