Parametric results for: BUZ31L under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 2 LOGIC LEVEL COMPATIBLE 1

5 hits Apply

200.0 mJ 4

5 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 4

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DS Breakdown Voltage-Min (1)

200 V 5

5 hits Apply

Drain Current-Max (ID) (1)

13.5 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

200 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

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TO-220AB 5

5 hits Apply

R-PSFM-T3 5

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e3 1

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Manufacturer (2)

Infineon Technologies AG 4 Siemens 1

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Number of Elements (1)

1 5

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Number of Terminals (1)

3 5

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ENHANCEMENT MODE 5

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150.0 °C 3

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PLASTIC/EPOXY 5

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RECTANGULAR 5

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FLANGE MOUNT 5

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Active 1 Obsolete 3 Transferred 1

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Yes 2

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NOT SPECIFIED 2

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Polarity/Channel Type (1)

N-CHANNEL 5

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75 W 1

5 hits Apply

75 W 1 95 W 1

Min (W) - Max (W)

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply