Parametric results for: BUZ355 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

8 hits Apply

720.0 mJ 2

8 hits Apply

DRAIN 2

8 hits Apply

Configuration (3)

SINGLE 5 Single 1 SINGLE WITH BUILT-IN DIODE 2

8 hits Apply

DS Breakdown Voltage-Min (1)

800 V 6

8 hits Apply

Drain Current-Max (Abs) (ID) (1)

6 A 1

8 hits Apply

Drain Current-Max (ID) (1)

6 A 7

8 hits Apply

Drain-source On Resistance-Max (1)

1.5 Ω 5

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

140 pF 3

8 hits Apply

TO-218 3 TO-218AC 2

8 hits Apply

R-PSFM-T3 5

8 hits Apply

e0 6

8 hits Apply

Manufacturer (8)

Freescale Semiconductor 1 Infineon Technologies AG 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 New Jersey Semiconductor Products Inc 1 North American Philips Discrete Products Div 1 Rochester Electronics LLC 1 Siemens 1

8 hits Apply

NOT SPECIFIED 1

8 hits Apply

Number of Elements (1)

1 7

8 hits Apply

Number of Terminals (1)

3 5

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 6

8 hits Apply

PLASTIC/EPOXY 5

8 hits Apply

RECTANGULAR 5

8 hits Apply

FLANGE MOUNT 5

8 hits Apply

Active 2 Obsolete 4 Transferred 2

8 hits Apply

No 1

8 hits Apply

NOT SPECIFIED 1

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

125 W 3

8 hits Apply

125 W 6

8 hits Apply

Surface Mount (1)

NO 7

8 hits Apply