Parametric results for: BUZ382 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

FRED FET 1

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

400 V 1

3 hits Apply

Drain Current-Max (ID) (1)

12.5 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

400 mΩ 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

200 pF 1

3 hits Apply

TO-218AA 1

3 hits Apply

R-PSFM-T3 1

3 hits Apply

e0 1

3 hits Apply

Manufacturer (3)

Infineon Technologies AG 1 Semiconductor Technology Inc 1 Siemens 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 1

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

FLANGE MOUNT 1

3 hits Apply

Contact Manufacturer 1 Obsolete 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

125 W 1

3 hits Apply

125 W 2

3 hits Apply

Surface Mount (1)

NO 2

3 hits Apply