Parametric results for: CFH120-08 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

LOW NOISE 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

3 V 3

3 hits Apply

Drain Current-Max (ID) (1)

40 mA 3

3 hits Apply

HIGH ELECTRON MOBILITY 3

3 hits Apply

Highest Frequency Band (1)

K BAND 3

3 hits Apply

R-PDSO-G4 3

3 hits Apply

e3 1

3 hits Apply

Manufacturer (3)

Infineon Technologies AG 1 Qorvo 1 TriQuint Semiconductor 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

4 3

3 hits Apply

DEPLETION MODE 3

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Obsolete 1 Transferred 2

3 hits Apply

No 1

3 hits Apply

NOT SPECIFIED 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

180 mW 1

3 hits Apply

Power Gain-Min (Gp) (1)

11.5 dB 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply