Parametric results for: CFH120-10 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

LOW NOISE 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

3 V 2

2 hits Apply

Drain Current-Max (ID) (1)

40 mA 2

2 hits Apply

HIGH ELECTRON MOBILITY 2

2 hits Apply

Highest Frequency Band (1)

K BAND 2

2 hits Apply

R-PDSO-G4 2

2 hits Apply

e3 1

2 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 TriQuint Semiconductor 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

4 2

2 hits Apply

DEPLETION MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

180 mW 1

2 hits Apply

Power Gain-Min (Gp) (1)

10.5 dB 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply