Parametric results for: CGHV59350F under RF Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount Configuration (1)

SINGLE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

125 V 1

1 hit Apply

Drain Current-Max (ID) (1)

24 A 1

1 hit Apply

HIGH ELECTRON MOBILITY 1

1 hit Apply

Highest Frequency Band (1)

C BAND 1

1 hit Apply

R-CDFM-F2 1

1 hit Apply

Manufacturer (1)

Wolfspeed 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

2 1

1 hit Apply

DEPLETION MODE 1

1 hit Apply

125.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

CERAMIC, METAL-SEALED COFIRED 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Transferred 1

1 hit Apply

Yes 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Power Gain-Min (Gp) (1)

11.5 dB 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply