Parametric results for: CGHV96100F2 under RF Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount Configuration (1)

SINGLE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

100 V 1

2 hits Apply

Drain Current-Max (ID) (1)

12 A 1

2 hits Apply

HIGH ELECTRON MOBILITY 1

2 hits Apply

Highest Frequency Band (1)

X BAND 1

2 hits Apply

R-CDFM-F2 1

2 hits Apply

Manufacturer (2)

Cree, Inc. 1 Wolfspeed 1

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

2 1

2 hits Apply

DEPLETION MODE 1

2 hits Apply

125.0 °C 1

2 hits Apply

-40.0 °C 1

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Transferred 2

2 hits Apply

Yes 1

2 hits Apply

NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

2 hits Apply

Power Gain-Min (Gp) (1)

10.5 dB 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply