Parametric results for: CLY5E6327 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

SOURCE 4

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

9 V 4

4 hits Apply

Drain Current-Max (ID) (1)

1.2 A 4

4 hits Apply

JUNCTION 4

4 hits Apply

Highest Frequency Band (1)

S BAND 4

4 hits Apply

R-PDSO-G4 4

4 hits Apply

e3 1 e4 2

4 hits Apply

Manufacturer (4)

Infineon Technologies AG 1 Qorvo 1 Siemens 1 TriQuint Semiconductor 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

4 4

4 hits Apply

DEPLETION MODE 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Obsolete 1 Transferred 3

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply