Parametric results for: CPH5855 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

20 V 2

3 hits Apply

Drain Current-Max (ID) (1)

2.5 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

93 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PDSO-G5 2

3 hits Apply

Manufacturer (3)

onsemi 1 SANYO Electric Co Ltd 1 SANYO Semiconductor Co Ltd 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

5 2

3 hits Apply

DEPLETION MODE 2 ENHANCEMENT MODE 1

3 hits Apply

125.0 °C 2

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

SMALL OUTLINE 2

3 hits Apply

Active 1 Obsolete 1 Transferred 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

900 mW 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply